In a common-source MOSFET amplifier, what describes the intrinsic gain and the role of ro?

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Multiple Choice

In a common-source MOSFET amplifier, what describes the intrinsic gain and the role of ro?

Explanation:
The main idea is that the drain load in a common-source MOSFET amplifier is the parallel combination of the external drain resistor and the transistor’s own output resistance ro. The small-signal drain current is gm times vgs, and this current flows into the load at the drain, giving a output voltage of vout = -gm·vgs · (Rc // ro). The negative sign comes from the inverting nature of the common-source stage. Because ro is finite, the effective load is smaller than Rc alone, so the gain magnitude is reduced from -gm·Rc to -gm·(Rc // ro). ro also sets the stage’s finite output resistance, which is Rc // ro, rather than an ideal infinite resistance. If ro were infinite, you’d get the ideal -gm·Rc; with ro finite, the gain is limited by the parallel combination. Ro can also influence high-frequency behavior through its interaction with drain capacitances to form RC paths that shape the bandwidth, though the dominant factors for frequency response are the capacitances themselves.

The main idea is that the drain load in a common-source MOSFET amplifier is the parallel combination of the external drain resistor and the transistor’s own output resistance ro. The small-signal drain current is gm times vgs, and this current flows into the load at the drain, giving a output voltage of vout = -gm·vgs · (Rc // ro). The negative sign comes from the inverting nature of the common-source stage.

Because ro is finite, the effective load is smaller than Rc alone, so the gain magnitude is reduced from -gm·Rc to -gm·(Rc // ro). ro also sets the stage’s finite output resistance, which is Rc // ro, rather than an ideal infinite resistance. If ro were infinite, you’d get the ideal -gm·Rc; with ro finite, the gain is limited by the parallel combination.

Ro can also influence high-frequency behavior through its interaction with drain capacitances to form RC paths that shape the bandwidth, though the dominant factors for frequency response are the capacitances themselves.

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